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Copy pathrohit_pidaparthi_1_sam_fok_2_2.9985_20.456_91.602.sp
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rohit_pidaparthi_1_sam_fok_2_2.9985_20.456_91.602.sp
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* Design Problem, ee114/214A- 2012
* Please fill in the specification achieved by your circuit
* before your submit the netlist.
**************************************************************
* The specifications that this script achieves are:
* sunetid = rohitpid, samfok
* Power = 2.9985 mW
* Gain = 20.456 K
* BandWidth = 91.602 MHz
***************************************************************
** Including the model file
.include /usr/class/ee114/hspice/ee114_hspice.sp
* Defining Top level circuit parameters
.param Cin = 100f
.param CL = 500f
.param RL = 10K
* defining the supply voltages
vdd vdd 0 2.5
vss vss 0 -2.5
* Defining the input current source
** For ac simulation uncomment the following 2 lines**
* Iina iina vdd ac 0.5
* Iinb vdd iinb ac 0.5
** For transient simulation uncomment the following 2 lines**
Iina iina vdd sin(0 0.5u 1e6)
Iinb vdd iinb sin(0 0.5u 1e6)
* Defining Input capacitance
Cina vdd iina 'Cin'
Cinb vdd iinb 'Cin'
* Defining the differential load
RL vouta voutb 'RL'
CL vouta voutb 'CL'
*** Your Trans-impedance Amplifier here ***
**nmos***
*name drain gate source bulk type parameters*
M1a node_1a 0 iina vss nmos114 w=11.8u l=1u
M1b node_1b 0 iinb vss nmos114 w=11.8u l=1u
M2a node_2a node_1a ibias2 vss nmos114 w=14.3u l=1u
M2b node_2b node_1b ibias2 vss nmos114 w=14.3u l=1u
M3a vdd node_2a vouta vss nmos114 w=65.8u l=1u
M3b vdd node_2b voutb vss nmos114 w=65.8u l=1u
**pmos***
*name drain gate source bulk type parameters*
ML1a node_1a node_1a vdd vdd pmos114 w=4.4u l=1u
ML1b node_1b node_1b vdd vdd pmos114 w=4.4u l=1u
ML2a node_2a node_2a vdd vdd pmos114 w=4.4u l=1u
ML2b node_2b node_2b vdd vdd pmos114 w=4.4u l=1u
*** Your Bias Circuitry here ***
**nmos***
*name drain gate source bulk type parameters*
Mbias1a iina nbias vss vss nmos114 w=2.2u l=2u
Mbias1b iinb nbias vss vss nmos114 w=2.2u l=2u
Mbias2a ibias2 nbias vss vss nmos114 w=2.2u l=2u
Mbias2b ibias2 nbias vss vss nmos114 w=2.2u l=2u
Mbias3a vouta nbias vss vss nmos114 w=15.6u l=2u
Mbias3b voutb nbias vss vss nmos114 w=15.6u l=2u
** for students enrolled in ee114, you can use the given ideal voltage source
*Vbias_n nbias vss 1.5 *replace --- by your value
*** drain gate source bulk mostype w_value l_value
*M1 vb vb vdd vdd pmos114 w=2u l=20u
*** nmos
*** drain gate source bulk mostype w_value l_value
Mu nbias nbias vx vss nmos114 w=6u l=1u
Ml vx nbias vss vss nmos114 w=2u l=1u
*Resistors
R vdd nbias 100k
** For students enrolled in ee214A, you need to design your bias ciruit. You cannpt use Vbias_n as ideal voltage source.
* defining the analysis
.op
.option post brief nomod
** For ac simulation uncomment the following line**
*.ac dec 100 100 10g
.measure ac gainmax max vdb(vouta)
.measure ac f3db when vdb(vouta)='gainmax-3'
** For transient simulation uncomment the following line **
.tran 0.01u 4u
.end