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Copy file name to clipboardExpand all lines: docs/src/connectors/connections.md
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As can be seen, we get exactly the same result. The only difference here is that we are solving an extra equation, which allows us to plot the body position as well.
Copy file name to clipboardExpand all lines: docs/src/tutorials/MOSFET_calibration.md
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# MOSFET I-V Curves
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In this example, first we'll demonstrate the I-V curves of the NMOS transistor model.
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# MOSFET I-V Curves
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In this example, first we'll demonstrate the I-V curves of the NMOS transistor model.
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First of all, we construct a circuit using the NMOS transistor. We'll need to import ModelingToolkit and the Electrical standard library that holds the transistor models.
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```@example NMOS
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```
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Here we just connect the source pin to ground, the drain pin to a voltage source named `Vcc`, and the gate pin to a voltage source named `Vb`.
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```@example NMOS
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@mtkmodel SimpleNMOSCircuit begin
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@components begin
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Now to make sure that the transistor model is working like it's supposed to, we can examine the plots of the drain-source voltage vs. the drain current, otherwise knowns as the I-V curve of the transistor.
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Now to make sure that the transistor model is working like it's supposed to, we can examine the plots of the drain-source voltage vs. the drain current, otherwise knowns as the I-V curve of the transistor.
xlabel = "Drain-Source Voltage (V)", ylabel = "Drain Current (A)")
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```
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We can see that we get exactly what we would expect: as the drain-source voltage increases, the drain current increases, until the the transistor gets in to the saturation region of operation.
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Then the only increase in drain current is due to the channel-length modulation effect. Additionally, we can see that the maximum current reached increases as the gate voltage increases.
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We can see that we get exactly what we would expect: as the drain-source voltage increases, the drain current increases, until the the transistor gets in to the saturation region of operation.
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Then the only increase in drain current is due to the channel-length modulation effect. Additionally, we can see that the maximum current reached increases as the gate voltage increases.
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